ReS2-based interlayer tunnel field effect           transistor

Omar B. Mohammed; Hema C. P. Movva; Nitin Prasad; Amithraj Valsaraj; Sangwoo Kang; Chris M. Corbet; Takashi Taniguchi; Kenji Watanabe; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1063/1.5004038

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ReS2-based interlayer tunnel field effect transistor

Omar B. Mohammed, Hema C. P. Movva, Nitin Prasad, Amithraj Valsaraj, Sangwoo Kang, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee.

Journal of Applied Physics 122 [24] 245701. 2017.

https://doi.org/10.1063/1.5004038

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作成時刻: 2017-12-28 21:04:41 +0900更新時刻: 2024-03-30 02:29:49 +0900