Atom-Vacancy-Defect-Derived Electric Hysteresis Loops and Stochastic Low-Frequency Noises in Few-Atom Layer MoS<sub>2</sub>

Mioko Kosugi; Shunta Furuichi; Yung-Chang Lin; Yusuke Kobayashi; Keita Takaki; Takashi Kikkawa; Takashi Taniguchi; Kenji Watanabe; Takashi Kohno; Kazu Suenaga; Eiji Saitoh; Shigeo Maruyama; Junji Haruyama; Mioko Kosugi; Shunta Furuichi; Yung-Chang Lin; Yusuke Kobayashi; Keita Takaki; Takashi Kikkawa; Takashi Taniguchi; Kenji Watanabe; Takashi Kohno; Kazu Suenaga; Eiji Saitoh; Shigeo Maruyama; Junji Haruyama

doi:10.1021/acsami.4c13147

HOME > 論文 > 書誌詳細

Atom-Vacancy-Defect-Derived Electric Hysteresis Loops and Stochastic Low-Frequency Noises in Few-Atom Layer MoS₂

Mioko Kosugi, Shunta Furuichi, Yung-Chang Lin, Yusuke Kobayashi, Keita Takaki, Takashi Kikkawa, Takashi Taniguchi, Kenji Watanabe, Takashi Kohno, Kazu Suenaga, Eiji Saitoh, Shigeo Maruyama, Junji Haruyama.

ACS Applied Materials & Interfaces 16 [46] 64190-64196. 2024.

https://doi.org/10.1021/acsami.4c13147

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2025-02-23 03:07:28 +0900 更新時刻: 2026-10-13 04:34:12 +0900

Atom-Vacancy-Defect-Derived Electric Hysteresis Loops and Stochastic Low-Frequency Noises in Few-Atom Layer MoS2

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Atom-Vacancy-Defect-Derived Electric Hysteresis Loops and Stochastic Low-Frequency Noises in Few-Atom Layer MoS₂