HOME > 論文 > 書誌詳細Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETsMasaharu Oshima, Daisuke Mori, Aki Takigawa, Akihiko Otsuki, Naoka Nagamura, Shun Konno, Yoshinobu Takahashi, Masato Kotsugi, Hiroshi Nohira. e-Journal of Surface Science and Nanotechnology 16 [0] 257-261. 2018.https://doi.org/10.1380/ejssnt.2018.257 Open Access Surface Science Society Japan (Publisher) NIMS著者永村 直佳Materials Data Repository (MDR)上の本文・データセット作成時刻: 2018-08-12 15:51:35 +0900更新時刻: 2024-03-29 21:55:45 +0900
