Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs

Masaharu Oshima, Daisuke Mori, Aki Takigawa, Akihiko Otsuki, Naoka Nagamura, Shun Konno, Yoshinobu Takahashi, Masato Kotsugi, Hiroshi Nohira.

e-Journal of Surface Science and Nanotechnology 16 [0] 257-261. 2018.

https://doi.org/10.1380/ejssnt.2018.257

Open Access Surface Science Society Japan (Publisher)

NIMS author(s)

NAGAMURA, Naoka

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-08-12 15:51:35 +0900Updated at: 2024-04-30 04:49:03 +0900

▲ Go to the top of this page