HOME > 論文 > 書誌詳細Fabrication of high-k/metal-gate MoS2field-effect transistor by device isolation process utilizing Ar-plasma etching(Fabrication of high-k/metal-gate MoS2 field-effect transistor with a device isolation process utilizing Ar-plasma etching)Naruki Ninomiya, Takahiro Mori, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, Atsushi Ando. Japanese Journal of Applied Physics 54 [4] 046502. 2015.https://doi.org/10.7567/jjap.54.046502 NIMS著者渡辺 英一郎津谷 大樹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:47:40 +0900更新時刻: 2024-04-01 23:25:08 +0900