Fabrication of high-k/metal-gate MoS2field-effect transistor by device isolation process utilizing Ar-plasma etching | SAMURAI, NIMS Researchers Directory Service

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Fabrication of high-k/metal-gate MoS2field-effect transistor by device isolation process utilizing Ar-plasma etching
(Fabrication of high-k/metal-gate MoS2 field-effect transistor with a device isolation process utilizing Ar-plasma etching)

Naruki Ninomiya, Takahiro Mori, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, Atsushi Ando.

Japanese Journal of Applied Physics 54 [4] 046502. 2015.

https://doi.org/10.7567/jjap.54.046502

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:47:40 +0900Updated at: 2024-04-01 23:25:08 +0900

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