SAMURAI - NIMS Researchers Database

HOME > 論文 > 書誌詳細

Fabrication of high-k/metal-gate MoS2field-effect transistor by device isolation process utilizing Ar-plasma etching
(Fabrication of high-k/metal-gate MoS2 field-effect transistor with a device isolation process utilizing Ar-plasma etching)

Naruki Ninomiya, Takahiro Mori, Noriyuki Uchida, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, Atsushi Ando.

NIMS著者


Materials Data Repository (MDR)上の本文・データセット


    作成時刻 :2016-05-24 17:47:40 +0900 更新時刻 :2020-11-16 22:51:34 +0900

    ▲ページトップへ移動