Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
(Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors)

著者	Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen, Jan Sebastian Dominic Rodriguez, Han-Ting Liao, Kenji Watanabe, Takashi Taniguchi, Chun-Wei Chen, Raman Sankar, Fang-Cheng Chou, Hsiang-Chih Chiu, Wei-Hua Wang.
掲載誌名	npj 2D Materials and Applications 3 [1] 49 ISSN: 23977132
出版社	Springer Science and Business Media LLC
発表年	2019
言語	English
DOI	https://doi.org/10.1038/s41699-019-0133-3
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Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors(Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors)