HOME > 論文 > 書誌詳細Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors(Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors)Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen, Jan Sebastian Dominic Rodriguez, Han-Ting Liao, Kenji Watanabe, Takashi Taniguchi, Chun-Wei Chen, Raman Sankar, Fang-Cheng Chou, Hsiang-Chih Chiu, Wei-Hua Wang. npj 2D Materials and Applications 3 [1] 49. 2019.https://doi.org/10.1038/s41699-019-0133-3 Open Access Springer Science and Business Media LLC (Publisher) NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-12-17 03:00:20 +0900更新時刻: 2024-03-31 00:18:06 +0900