Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors

Yi-Hsun Chen; Chih-Yi Cheng; Shao-Yu Chen; Jan Sebastian Dominic Rodriguez; Han-Ting Liao; Kenji Watanabe; Takashi Taniguchi; Chun-Wei Chen; Raman Sankar; Fang-Cheng Chou; Hsiang-Chih Chiu; Wei-Hua Wang

doi:10.1038/s41699-019-0133-3

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Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
(Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors)

Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen, Jan Sebastian Dominic Rodriguez, Han-Ting Liao, Kenji Watanabe, Takashi Taniguchi, Chun-Wei Chen, Raman Sankar, Fang-Cheng Chou, Hsiang-Chih Chiu, Wei-Hua Wang.

npj 2D Materials and Applications 3 [1] 49. 2019.

https://doi.org/10.1038/s41699-019-0133-3

Open Access Springer Science and Business Media LLC (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-12-17 03:00:20 +0900更新時刻: 2024-03-31 00:18:06 +0900

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors(Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors
(Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors)