First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces

Byung Deok Yu; Kyoungwan Park; Hanchul Kim; Chun-Hyung Chung; Han Woong Yeom; In-Whan Lyo; Ki-jeong Kong; Yoshiyuki Miyamoto; Osamu Sugino; Takahisa Ohno; Byung Deok Yu; Kyoungwan Park; Hanchul Kim; Chun-Hyung Chung; Han Woong Yeom; In-Whan Lyo; Ki-jeong Kong; Yoshiyuki Miyamoto; Osamu Sugino; Takahisa Ohno

doi:10.1143/jjap.45.2144

First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces
(傾斜Si(001)表面のステップ酸化に関する第一原理研究 )

Byung Deok Yu, Kyoungwan Park, Hanchul Kim, Chun-Hyung Chung, Han Woong Yeom, In-Whan Lyo, Ki-jeong Kong, Yoshiyuki Miyamoto, Osamu Sugino, Takahisa Ohno.

Japanese Journal of Applied Physics 45 [3B] 2144-2147. 2006.

https://doi.org/10.1143/jjap.45.2144

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 15:07:08 +0900Updated at: 2024-03-30 02:08:08 +0900

First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces(傾斜Si(001)表面のステップ酸化に関する第一原理研究 )

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces
(傾斜Si(001)表面のステップ酸化に関する第一原理研究 )