GaN radiation detectors with low-gain avalanche diode structure

Hironori Okumura; Satoshi Iida; Shigeki Hirose; Kosuke Itabashi; Manabu Togawa; Masaya Miyahara; Jiro Nishinaga; Masataka Imura; Keigo Urasaki; Tadaaki Isobe; Hironori Okumura; Satoshi Iida; Shigeki Hirose; Kosuke Itabashi; Manabu Togawa; Masaya Miyahara; Jiro Nishinaga; Masataka Imura; Keigo Urasaki; Tadaaki Isobe

doi:10.35848/1347-4065/ae2dad

GaN radiation detectors with low-gain avalanche diode structure

Hironori Okumura, Satoshi Iida, Shigeki Hirose, Kosuke Itabashi, Manabu Togawa, Masaya Miyahara, Jiro Nishinaga, Masataka Imura, Keigo Urasaki, Tadaaki Isobe.

Japanese Journal of Applied Physics 65 [1] 016501. 2026.

https://doi.org/10.35848/1347-4065/ae2dad

NIMS author(s)

IMURA, Masataka

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2026-01-15 03:06:06 +0900 Updated at: 2026-05-19 04:35:41 +0900