Individual
Vanadium Dopants Form Deep In-Gap States
in Monolayer WS2

Tianhui Zhu; Carlos A. Gonzalez; Shihao Tu; Søren Tornøe; Ivan Pelayo; Dong-Rong Wu; Zhehao Ge; Hem Prasad Bhusal; Kenji Watanabe; Takashi Taniguchi; Nobuhiko P. Kobayashi; Yuan Ping; Jairo Velasco; Aiming Yan; Tianhui Zhu; Carlos A. Gonzalez; Shihao Tu; Søren Tornøe; Ivan Pelayo; Dong-Rong Wu; Zhehao Ge; Hem Prasad Bhusal; Kenji Watanabe; Takashi Taniguchi; Nobuhiko P. Kobayashi; Yuan Ping; Jairo Velasco; Aiming Yan

doi:10.1021/acs.nanolett.6c02833

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Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2

Tianhui Zhu, Carlos A. Gonzalez, Shihao Tu, Søren Tornøe, Ivan Pelayo, Dong-Rong Wu, Zhehao Ge, Hem Prasad Bhusal, Kenji Watanabe, Takashi Taniguchi, Nobuhiko P. Kobayashi, Yuan Ping, Jairo Velasco, Aiming Yan.

Nano Letters 26 [38] 12802-12810. 2026.

https://doi.org/10.1021/acs.nanolett.6c02833

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作成時刻: 2026-10-06 03:08:18 +0900 更新時刻: 2026-10-07 03:08:28 +0900