Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction, Rutherford backscattering, cathodolu | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction, Rutherford backscattering, cathodolu
(陽電子、X線、RBS、CL、ホール効果によるZnO中の欠陥の熱回復過程の研究)

Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, T. Sekiguchi.

Journal of Applied Physics 94 [8] 4807. 2003.

https://doi.org/10.1063/1.1609050

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作成時刻: 2016-05-24 11:59:07 +0900 更新時刻: 2026-10-29 04:16:05 +0900

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