Self-Aligned Formation of Sub 1 nm Gaps Utilizing Electromigration during Metal Deposition

Yasuhisa Naitoh; Tatsuhiko Ohata; Ryuji Matsushita; Eri Okawa; Masayo Horikawa; Makiko Oyama; Masakazu Mukaida; Dong F. Wang; Manabu Kiguchi; Kazuhito Tsukagoshi; Takao Ishida

doi:10.1021/am403115m

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Self-Aligned Formation of Sub 1 nm Gaps Utilizing Electromigration during Metal Deposition

Yasuhisa Naitoh, Tatsuhiko Ohata, Ryuji Matsushita, Eri Okawa, Masayo Horikawa, Makiko Oyama, Masakazu Mukaida, Dong F. Wang, Manabu Kiguchi, Kazuhito Tsukagoshi, Takao Ishida.

ACS Applied Materials & Interfaces 5 [24] 12869-12875. 2013.

https://doi.org/10.1021/am403115m

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作成時刻: 2016-05-24 17:16:06 +0900更新時刻: 2024-04-02 03:17:34 +0900