Rational impurity doping for enhanced hole mobility <i>in silicon</i> quantum dots for light-emitting diodes | SAMURAI, NIMS Researchers Directory Service

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Rational impurity doping for enhanced hole mobility in silicon quantum dots for light-emitting diodes

Hiroyuki Yamada, Tadaaki Nagao, Naoto Shirahata.

Nanoscale Advances 7 [16] 4837-4841. 2025.

https://doi.org/10.1039/d5na00349k

Open Access Royal Society of Chemistry (RSC) (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Rational impurity doping for enhanced hole mobility in silicon quantum dots for light-emitting diodes

Created at: 2025-08-07 03:08:19 +0900 Updated at: 2026-10-22 04:30:34 +0900

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