HOME > 論文 > 書誌詳細Rational impurity doping for enhanced hole mobility in silicon quantum dots for light-emitting diodesHiroyuki Yamada, Tadaaki Nagao, Naoto Shirahata. Nanoscale Advances 7 [16] 4837-4841. 2025.https://doi.org/10.1039/d5na00349k Open Access Royal Society of Chemistry (RSC) (Publisher) Materials Data Repository (MDR) NIMS著者長尾 忠昭白幡 直人Materials Data Repository (MDR)上の本文・データセットMDRavailable Rational impurity doping for enhanced hole mobility in silicon quantum dots for light-emitting diodes 作成時刻: 2025-08-07 03:08:19 +0900 更新時刻: 2026-09-21 04:30:13 +0900
