Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors
(Air Stable Transport in Graphene Contacted, Fully Encapsulated Ultra Thin Black Phosphorus-Based Field- Effect Transistors)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-05-24 17:47:15 +0900 Updated at: 2026-11-01 04:24:33 +0900