Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructres

G. William Burg; Nitin Prasad; Babak Fallahazad; Amithraj Valsaraj; Kyounghwan Kim; Takashi Taniguchi; Kenji Watanabe; Qingxiao Wang; Moon J. Kim; Leonard F. Register; Emanuel Tutuc

doi:10.1021/acs.nanolett.7b01505

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Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
(Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructres)

G. William Burg, Nitin Prasad, Babak Fallahazad, Amithraj Valsaraj, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Qingxiao Wang, Moon J. Kim, Leonard F. Register, Emanuel Tutuc.

Nano Letters 17 [6] 3919-3925. 2017.

https://doi.org/10.1021/acs.nanolett.7b01505

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2017-09-04 22:04:02 +0900更新時刻: 2024-03-30 02:25:48 +0900

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures(Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructres)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
(Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructres)