Polarity-dependent twist-controlled resonant tunneling device based on few-layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">W</mml:mi><mml:msub><mml:mi>Se</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe2

Kei Kinoshita, Rai Moriya, Shota Okazaki, Yijin Zhang, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida.

Physical Review Research 5 [4] 043292. 2023.

https://doi.org/10.1103/physrevresearch.5.043292

Open Access American Physical Society (APS) (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Polarity-dependent twist-controlled resonant tunneling device based on few-layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">W</mml:mi><mml:msub><mml:mi>Se</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

作成時刻: 2024-01-09 03:08:14 +0900 更新時刻: 2026-09-29 09:49:06 +0900

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