Far-UV photoluminescence microscope for impurity domain in hexagonal-boron-nitride single crystals by high-pressure, high-temperature synthesis | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Far-UV photoluminescence microscope for impurity domain in hexagonal-boron-nitride single crystals by high-pressure, high-temperature synthesis

Kenji Watanabe, Takashi Taniguchi.

npj 2D Materials and Applications 3 [1] . 2019.

https://doi.org/10.1038/s41699-019-0124-4

Open Access Springer Science and Business Media LLC (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Far-UV photoluminescence microscope for impurity domain in hexagonal-boron-nitride single crystals by high-pressure, high-temperature synthesis

作成時刻: 2019-11-12 03:00:16 +0900 更新時刻: 2026-09-29 05:50:29 +0900

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