Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal–Hexagonal Boron Nitride–Graphene Junctions
(Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions)

著者	U. Chandni, K. Watanabe, T. Taniguchi, J. P. Eisenstein.
掲載誌名	Nano Letters 16 [12] 7982-7987 ISSN: 15306984 ESIでのカテゴリ: PHYSICS
出版社	American Chemical Society (ACS)
発表年	2016
言語	English
DOI	https://doi.org/10.1021/acs.nanolett.6b04369
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Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal–Hexagonal Boron Nitride–Graphene Junctions(Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions)