Low Resistance Contact to P-Type Monolayer WSe<sub>2</sub>

Jingxu Xie; Zuocheng Zhang; Haodong Zhang; Vikram Nagarajan; Wenyu Zhao; Ha-Leem Kim; Collin Sanborn; Ruishi Qi; Sudi Chen; Salman Kahn; Kenji Watanabe; Takashi Taniguchi; Alex Zettl; Michael F. Crommie; James Analytis; Feng Wang; Jingxu Xie; Zuocheng Zhang; Haodong Zhang; Vikram Nagarajan; Wenyu Zhao; Ha-Leem Kim; Collin Sanborn; Ruishi Qi; Sudi Chen; Salman Kahn; Kenji Watanabe; Takashi Taniguchi; Alex Zettl; Michael F. Crommie; James Analytis; Feng Wang

doi:10.1021/acs.nanolett.3c04195

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Low Resistance Contact to P-Type Monolayer WSe₂

Jingxu Xie, Zuocheng Zhang, Haodong Zhang, Vikram Nagarajan, Wenyu Zhao, Ha-Leem Kim, Collin Sanborn, Ruishi Qi, Sudi Chen, Salman Kahn, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Michael F. Crommie, James Analytis, Feng Wang.

Nano Letters 24 [20] 5937-5943. 2024.

https://doi.org/10.1021/acs.nanolett.3c04195

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2026-04-28 03:07:10 +0900 更新時刻: 2026-09-02 07:02:25 +0900

Low Resistance Contact to P-Type Monolayer WSe2

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Low Resistance Contact to P-Type Monolayer WSe₂