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Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates
((0001)サファイア基板上におけるツインフリーα-Ga2O3のHVPE成長)

Yuichi Oshima, Encarnación G. Víllora, Kiyoshi Shimamura.
Applied Physics Express 8 [5] 055501. 2015.

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Created at :2016-05-24 17:46:47 +0900 Updated at :2020-11-16 22:49:34 +0900

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