HOME > Article > DetailHalide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates((0001)サファイア基板上におけるツインフリーα-Ga2O3のHVPE成長)Yuichi Oshima, Encarnación G. Víllora, Kiyoshi Shimamura. Applied Physics Express 8 [5] 055501. 2015.https://doi.org/10.7567/apex.8.055501 Open Access Japan Society of Applied Physics (Publisher) Materials Data Repository (MDR) NIMS author(s)OSHIMA, YuichiSHIMAMURA, KiyoshiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates Created at :2016-05-24 17:46:47 +0900 Updated at :2020-11-16 22:49:34 +0900