S. Nakagawa; T. Shizu; T. Imai; M. Nakayama; J. Kim; H. Minami; K. Kadowaki; M. Tsujimoto; H. Nakao; H. Eisaki; S. Ishida; T. Mochiku; Y. Hasegawa; T. Kashiwagi

doi:10.1063/5.0137830

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Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

S. Nakagawa, T. Shizu, T. Imai, M. Nakayama, J. Kim, H. Minami, K. Kadowaki, M. Tsujimoto, H. Nakao, H. Eisaki, S. Ishida, T. Mochiku, Y. Hasegawa, T. Kashiwagi.

Journal of Applied Physics 133 [16] 163904. 2023.

https://doi.org/10.1063/5.0137830

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MDRavailable Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

作成時刻: 2023-12-23 03:15:20 +0900更新時刻: 2024-08-10 10:28:56 +0900