Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

S. Nakagawa; T. Shizu; T. Imai; M. Nakayama; J. Kim; H. Minami; K. Kadowaki; M. Tsujimoto; H. Nakao; H. Eisaki; S. Ishida; T. Mochiku; Y. Hasegawa; T. Kashiwagi; S. Nakagawa; T. Shizu; T. Imai; M. Nakayama; J. Kim; H. Minami; K. Kadowaki; M. Tsujimoto; H. Nakao; H. Eisaki; S. Ishida; T. Mochiku; Y. Hasegawa; T. Kashiwagi

doi:10.1063/5.0137830

Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

S. Nakagawa, T. Shizu, T. Imai, M. Nakayama, J. Kim, H. Minami, K. Kadowaki, M. Tsujimoto, H. Nakao, H. Eisaki, S. Ishida, T. Mochiku, Y. Hasegawa, T. Kashiwagi.

Journal of Applied Physics 133 [16] 163904. 2023.

https://doi.org/10.1063/5.0137830

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

MOCHIKU, Takashi

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

Created at: 2023-12-23 03:15:20 +0900 Updated at: 2026-10-08 08:56:28 +0900