High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Dongjea Seo; Dong Yun Lee; Junyoung Kwon; Jea Jung Lee; Takashi Taniguchi; Kenji Watanabe; Gwan-Hyoung Lee; Keun Soo Kim; James Hone; Young Duck Kim; Heon-Jin Choi

doi:10.1063/1.5094682

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High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Dongjea Seo, Dong Yun Lee, Junyoung Kwon, Jea Jung Lee, Takashi Taniguchi, Kenji Watanabe, Gwan-Hyoung Lee, Keun Soo Kim, James Hone, Young Duck Kim, Heon-Jin Choi.

Applied Physics Letters 115 [1] 012104. 2019.

https://doi.org/10.1063/1.5094682

Open Access AIP Publishing (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-07-17 03:00:17 +0900更新時刻: 2024-03-31 01:20:50 +0900