Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, J P Kleider, T Teraji, Y Koide.

Journal of Physics D: Applied Physics 47 [35] 355102. 2014.

https://doi.org/10.1088/0022-3727/47/35/355102

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作成時刻: 2016-05-24 17:45:25 +0900更新時刻: 2024-10-06 09:34:16 +0900

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