High-Performance p-Type Transistor in Monolayer 2H-MoTe<sub>2</sub>

Anjaly Rajendran; Zhiying Wang; Thomas Darlington; Yinjie Guo; Jacob Amontree; Kevin W. C. Kwock; Luke N. Holtzman; Kenji Watanabe; Takashi Taniguchi; Katayun Barmak; Cory Dean; James Schuck; Hae Yeon Lee; James Hone; Anjaly Rajendran; Zhiying Wang; Thomas Darlington; Yinjie Guo; Jacob Amontree; Kevin W. C. Kwock; Luke N. Holtzman; Kenji Watanabe; Takashi Taniguchi; Katayun Barmak; Cory Dean; James Schuck; Hae Yeon Lee; James Hone

doi:10.1021/acs.jpcc.4c08418

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High-Performance p-Type Transistor in Monolayer 2H-MoTe₂

Anjaly Rajendran, Zhiying Wang, Thomas Darlington, Yinjie Guo, Jacob Amontree, Kevin W. C. Kwock, Luke N. Holtzman, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, Cory Dean, James Schuck, Hae Yeon Lee, James Hone.

The Journal of Physical Chemistry C 129 [5] 2830-2836. 2025.

https://doi.org/10.1021/acs.jpcc.4c08418

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2025-02-23 03:10:46 +0900 更新時刻: 2026-06-09 04:31:13 +0900

High-Performance p-Type Transistor in Monolayer 2H-MoTe2

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

High-Performance p-Type Transistor in Monolayer 2H-MoTe₂