High-Performance p-Type Transistor in Monolayer 2H-MoTe<sub>2</sub>

Anjaly Rajendran; Zhiying Wang; Thomas Darlington; Yinjie Guo; Jacob Amontree; Kevin W. C. Kwock; Luke N. Holtzman; Kenji Watanabe; Takashi Taniguchi; Katayun Barmak; Cory Dean; James Schuck; Hae Yeon Lee; James Hone; Anjaly Rajendran; Zhiying Wang; Thomas Darlington; Yinjie Guo; Jacob Amontree; Kevin W. C. Kwock; Luke N. Holtzman; Kenji Watanabe; Takashi Taniguchi; Katayun Barmak; Cory Dean; James Schuck; Hae Yeon Lee; James Hone

doi:10.1021/acs.jpcc.4c08418

High-Performance p-Type Transistor in Monolayer 2H-MoTe₂

Anjaly Rajendran, Zhiying Wang, Thomas Darlington, Yinjie Guo, Jacob Amontree, Kevin W. C. Kwock, Luke N. Holtzman, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, Cory Dean, James Schuck, Hae Yeon Lee, James Hone.

The Journal of Physical Chemistry C 129 [5] 2830-2836. 2025.

https://doi.org/10.1021/acs.jpcc.4c08418

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2025-02-23 03:10:46 +0900 Updated at: 2026-10-13 04:31:43 +0900

High-Performance p-Type Transistor in Monolayer 2H-MoTe2

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

High-Performance p-Type Transistor in Monolayer 2H-MoTe₂