Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Keiichi Omika; Yasunori Tateno; Tsuyoshi Kouchi; Tsutomu Komatani; Seiji Yaegassi; Keiichi Yui; Ken Nakata; Naoka Nagamura; Masato Kotsugi; Koji Horiba; Masaharu Oshima; Maki Suemitsu; Hirokazu Fukidome; Keiichi Omika; Yasunori Tateno; Tsuyoshi Kouchi; Tsutomu Komatani; Seiji Yaegassi; Keiichi Yui; Ken Nakata; Naoka Nagamura; Masato Kotsugi; Koji Horiba; Masaharu Oshima; Maki Suemitsu; Hirokazu Fukidome

doi:10.1038/s41598-018-31485-4

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Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome.

Scientific Reports 8 [1] . 2018.

https://doi.org/10.1038/s41598-018-31485-4

Open Access Springer Nature America, Inc (Publisher)

NIMS著者

永村直佳

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2018-09-15 15:10:16 +0900更新時刻: 2025-01-08 04:49:09 +0900