HOME > Article > DetailOperation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray NanospectroscopyKeiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome. Scientific Reports 8 [1] . 2018.https://doi.org/10.1038/s41598-018-31485-4 Open Access Springer Nature America, Inc (Publisher) NIMS author(s)NAGAMURA, NaokaFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-09-15 15:10:16 +0900Updated at: 2025-02-09 04:49:27 +0900