Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Keiichi Omika; Yasunori Tateno; Tsuyoshi Kouchi; Tsutomu Komatani; Seiji Yaegassi; Keiichi Yui; Ken Nakata; Naoka Nagamura; Masato Kotsugi; Koji Horiba; Masaharu Oshima; Maki Suemitsu; Hirokazu Fukidome; Keiichi Omika; Yasunori Tateno; Tsuyoshi Kouchi; Tsutomu Komatani; Seiji Yaegassi; Keiichi Yui; Ken Nakata; Naoka Nagamura; Masato Kotsugi; Koji Horiba; Masaharu Oshima; Maki Suemitsu; Hirokazu Fukidome

doi:10.1038/s41598-018-31485-4

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

Keiichi Omika, Yasunori Tateno, Tsuyoshi Kouchi, Tsutomu Komatani, Seiji Yaegassi, Keiichi Yui, Ken Nakata, Naoka Nagamura, Masato Kotsugi, Koji Horiba, Masaharu Oshima, Maki Suemitsu, Hirokazu Fukidome.

Scientific Reports 8 [1] . 2018.

https://doi.org/10.1038/s41598-018-31485-4

Open Access Springer Nature America, Inc (Publisher)

NIMS author(s)

NAGAMURA, Naoka

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-09-15 15:10:16 +0900Updated at: 2024-03-29 22:11:09 +0900