Defect passivation by annealing enables stable transport in Li-doped Mg <sub>2</sub> Sn epitaxial films for microfabricated thermoelectric devices | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Defect passivation by annealing enables stable transport in Li-doped Mg ₂ Sn epitaxial films for microfabricated thermoelectric devices

Kenneth Magallon Senados, Takashi Aizawa, Isao Ohkubo, Masayuki Murata, Takahiro Baba, Akihiko Ohi, Akira Uedono, Takeaki Sakurai, Takao Mori.

Journal of Materials Chemistry A 14 [18] 10764-10775. 2026.

https://doi.org/10.1039/d5ta09301e

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作成時刻: 2026-03-24 03:09:46 +0900 更新時刻: 2026-08-29 06:05:09 +0900

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