High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy

Oleg Makarovsky; Richard J. A. Hill; Tin S. Cheng; Alex Summerfield; Takeshi Taniguchi; Kenji Watanabe; Christopher J. Mellor; Amalia Patanè; Laurence Eaves; Sergei V. Novikov; Peter H. Beton; Oleg Makarovsky; Richard J. A. Hill; Tin S. Cheng; Alex Summerfield; Takeshi Taniguchi; Kenji Watanabe; Christopher J. Mellor; Amalia Patanè; Laurence Eaves; Sergei V. Novikov; Peter H. Beton

doi:10.1038/s43246-024-00633-x

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High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy

Oleg Makarovsky, Richard J. A. Hill, Tin S. Cheng, Alex Summerfield, Takeshi Taniguchi, Kenji Watanabe, Christopher J. Mellor, Amalia Patanè, Laurence Eaves, Sergei V. Novikov, Peter H. Beton.

Communications Materials 5 [1] 189. 2024.

https://doi.org/10.1038/s43246-024-00633-x

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MDRavailable High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy

作成時刻: 2025-02-23 03:08:44 +0900 更新時刻: 2026-07-09 04:35:55 +0900