RF compressibility of topological surface and interface states in Bi2Se3-hBN capacitors

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RF compressibility of topological surface and interface states in metal–hBN–Bi2Se3 capacitors
(RF compressibility of topological surface and interface states in Bi2Se3-hBN capacitors)

A Inhofer, T Wilde, J Duffy, M Boukhicha, J Palomo, K Watanabe, T Taniguchi, J M Berroir, G Fève, E Bocquillon, B Plaçais, B A Assaf.

Open Access IOP Publishing (Publisher)

作成時刻: 2019-09-19 03:00:19 +0900更新時刻: 2024-03-31 00:02:17 +0900