Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Zhenping Wang; Qirong Yao; Yalei Hu; Chuan Li; Marleen Hußmann; Ben Weintrub; Jan N. Kirchhof; Kirill Bolotin; Takashi Taniguchi; Kenji Watanabe; Siegfried Eigler

doi:10.1039/c9ra09197a

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Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Zhenping Wang, Qirong Yao, Yalei Hu, Chuan Li, Marleen Hußmann, Ben Weintrub, Jan N. Kirchhof, Kirill Bolotin, Takashi Taniguchi, Kenji Watanabe, Siegfried Eigler.

RSC Advances 9 [65] 38011-38016. 2019.

https://doi.org/10.1039/c9ra09197a

Open Access Royal Society of Chemistry (RSC) (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2020-03-04 03:00:17 +0900更新時刻: 2024-03-31 00:18:44 +0900