Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors

Siwen Zhao; Jinqiang Huang; Valentin Crépel; Zhiren Xiong; Xingguang Wu; Tongyao Zhang; Hanwen Wang; Xiangyan Han; Zhengyu Li; Chuanying Xi; Senyang Pan; Zhaosheng Wang; Guangli Kuang; Jun Luo; Qinxin Shen; Jie Yang; Rui Zhou; Kenji Watanabe; Takashi Taniguchi; Benjamin Sacépé; Jing Zhang; Ning Wang; Jianming Lu; Nicolas Regnault; Zheng Vitto Han; Siwen Zhao; Jinqiang Huang; Valentin Crépel; Zhiren Xiong; Xingguang Wu; Tongyao Zhang; Hanwen Wang; Xiangyan Han; Zhengyu Li; Chuanying Xi; Senyang Pan; Zhaosheng Wang; Guangli Kuang; Jun Luo; Qinxin Shen; Jie Yang; Rui Zhou; Kenji Watanabe; Takashi Taniguchi; Benjamin Sacépé; Jing Zhang; Ning Wang; Jianming Lu; Nicolas Regnault; Zheng Vitto Han

doi:10.1038/s41928-024-01274-1

Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors

Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han.

Nature Electronics 7 [12] 1117-1125. 2024.

https://doi.org/10.1038/s41928-024-01274-1

Open Access Springer Science and Business Media LLC (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2026-08-18 03:10:28 +0900 Updated at: 2026-10-20 04:40:50 +0900