HOME > 論文 > 書誌詳細Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy(Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy)Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, Kiyoshi Shimamura. Journal of Applied Physics 118 [8] 085301. 2015.https://doi.org/10.1063/1.4929417 Open Access Materials Data Repository (MDR) NIMS著者大島 祐一松下 能孝島村 清史Materials Data Repository (MDR)上の本文・データセットMDRavailable Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy 作成時刻: 2016-05-24 17:54:09 +0900更新時刻: 2025-02-10 09:34:42 +0900