Competition between Bipolar Conduction Modes in Extrinsically p-Doped MoS2: Interaction with Gate Dielectric Matters

Kyungmin Ko; Jing Huang; Jaeeun Kwon; Mingyu Jang; Hanbin Cho; Seonguk Yang; Sungyeon Kim; Sangwoo Park; Takashi Taniguchi; Kenji Watanabe; Der-Yuh Lin; Swati Singh; Dong-Hyeok Lim; Seth Ariel Tongay; Jun Kang; Joonki Suh; Kyungmin Ko; Jing Huang; Jaeeun Kwon; Mingyu Jang; Hanbin Cho; Seonguk Yang; Sungyeon Kim; Sangwoo Park; Takashi Taniguchi; Kenji Watanabe; Der-Yuh Lin; Swati Singh; Dong-Hyeok Lim; Seth Ariel Tongay; Jun Kang; Joonki Suh

doi:10.1021/acsnano.4c15202

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Competition between Bipolar Conduction Modes in Extrinsically p-Doped MoS₂: Interaction with Gate Dielectric Matters

Kyungmin Ko, Jing Huang, Jaeeun Kwon, Mingyu Jang, Hanbin Cho, Seonguk Yang, Sungyeon Kim, Sangwoo Park, Takashi Taniguchi, Kenji Watanabe, Der-Yuh Lin, Swati Singh, Dong-Hyeok Lim, Seth Ariel Tongay, Jun Kang, Joonki Suh.

ACS Nano 19 [1] 1630-1641. 2025.

https://doi.org/10.1021/acsnano.4c15202

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作成時刻: 2025-02-23 03:10:04 +0900 更新時刻: 2026-10-12 04:34:55 +0900