Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Sudipta Dubey; Simone Lisi; Goutham Nayak; Felix Herziger; Van-Dung Nguyen; Toai Le Quang; Vladimir Cherkez; César González; Yannick J. Dappe; Kenji Watanabe; Takashi Taniguchi; Laurence Magaud; Pierre Mallet; Jean-Yves Veuillen; Raul Arenal; Laëtitia Marty; Julien Renard; Nedjma Bendiab; Johann Coraux; Vincent Bouchiat

doi:10.1021/acsnano.7b05520

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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Sudipta Dubey, Simone Lisi, Goutham Nayak, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Vladimir Cherkez, César González, Yannick J. Dappe, Kenji Watanabe, Takashi Taniguchi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat.

ACS Nano 11 [11] 11206-11216. 2017.

https://doi.org/10.1021/acsnano.7b05520

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作成時刻: 2017-12-11 20:42:55 +0900更新時刻: 2024-03-30 02:40:16 +0900