Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

著者	Sudipta Dubey, Simone Lisi, Goutham Nayak, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Vladimir Cherkez, César González, Yannick J. Dappe, Kenji Watanabe, Takashi Taniguchi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat.
掲載誌名	ACS Nano 11 [11] 11206-11216 ISSN: 1936086X, 19360851 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	American Chemical Society (ACS)
発表年	2017
言語	English
DOI	https://doi.org/10.1021/acsnano.7b05520
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