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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Sudipta Dubey, Simone Lisi, Goutham Nayak, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Vladimir Cherkez, César González, Yannick J. Dappe, Kenji Watanabe, Takashi Taniguchi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat.
ACS Nano 11 [11] 11206-11216. 2017.


Materials Data Repository (MDR)上の本文・データセット

    作成時刻: 2017-12-11 20:42:55 +0900更新時刻: 2024-03-30 02:40:16 +0900