Nonvolatile Memristive Effect in Few-Layer CrI<sub>3</sub> Driven by Electrostatic Gating

ZhuangEn Fu; Piumi I. Samarawickrama; Yanglin Zhu; Zhiqiang Mao; Wenyong Wang; Kenji Watanabe; Takashi Taniguchi; Jinke Tang; John Ackerman; Jifa Tian; ZhuangEn Fu; Piumi I. Samarawickrama; Yanglin Zhu; Zhiqiang Mao; Wenyong Wang; Kenji Watanabe; Takashi Taniguchi; Jinke Tang; John Ackerman; Jifa Tian

doi:10.1021/acs.nanolett.3c03926

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Nonvolatile Memristive Effect in Few-Layer CrI₃ Driven by Electrostatic Gating

ZhuangEn Fu, Piumi I. Samarawickrama, Yanglin Zhu, Zhiqiang Mao, Wenyong Wang, Kenji Watanabe, Takashi Taniguchi, Jinke Tang, John Ackerman, Jifa Tian.

Nano Letters 23 [24] 11866-11873. 2023.

https://doi.org/10.1021/acs.nanolett.3c03926

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2024-01-09 03:08:09 +0900 更新時刻: 2026-10-08 08:58:04 +0900

Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Nonvolatile Memristive Effect in Few-Layer CrI₃ Driven by Electrostatic Gating