Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma

Fumikazu Mizutani, Shintaro Higashi, Mari Inoue, Toshihide Nabatame.

Journal of Vacuum Science & Technology A 38 [2] 022412. 2020.

https://doi.org/10.1116/1.5134738

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生田目俊秀

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2020-02-29 03:19:13 +0900更新時刻: 2024-10-06 05:52:16 +0900

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