HOME > 論文 > 書誌詳細Growth of stable amorphous silicon films by gas-flow-controlled RF plasma-enhanced chemical vapour deposition(ガス流制御RFプラズマCVD法による高安定アモルファスSi膜成長)Chisato Niikura, Akihisa Matsuda. physica status solidi (a) 207 [3] 521-524. 2010.https://doi.org/10.1002/pssa.200982844 NIMS著者新倉 ちさとMaterials Data Repository (MDR)上の本文・データセット作成時刻: 2018-06-08 20:40:14 +0900更新時刻: 2025-01-11 06:05:41 +0900