HOME > Article > DetailGrowth of stable amorphous silicon films by gas-flow-controlled RF plasma-enhanced chemical vapour deposition(ガス流制御RFプラズマCVD法による高安定アモルファスSi膜成長)Chisato Niikura, Akihisa Matsuda. physica status solidi (a) 207 [3] 521-524. 2010.https://doi.org/10.1002/pssa.200982844 NIMS author(s)NIIKURA, ChisatoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-06-08 20:40:14 +0900Updated at: 2025-03-13 05:57:09 +0900