Giant gate-tunable band gap renormalization and excitonic effects in a 2D semiconductor

Zhizhan Qiu; Maxim Trushin; Hanyan Fang; Ivan Verzhbitskiy; Shiyuan Gao; Evan Laksono; Ming Yang; Pin Lyu; Jing Li; Jie Su; Mykola Telychko; Kenji Watanabe; Takashi Taniguchi; Jishan Wu; A. H. Castro Neto; Li Yang; Goki Eda; Shaffique Adam; Jiong Lu

doi:10.1126/sciadv.aaw2347

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Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
(Giant gate-tunable band gap renormalization and excitonic effects in a 2D semiconductor)

Zhizhan Qiu, Maxim Trushin, Hanyan Fang, Ivan Verzhbitskiy, Shiyuan Gao, Evan Laksono, Ming Yang, Pin Lyu, Jing Li, Jie Su, Mykola Telychko, Kenji Watanabe, Takashi Taniguchi, Jishan Wu, A. H. Castro Neto, Li Yang, Goki Eda, Shaffique Adam, Jiong Lu.

Science Advances 5 [7] eaaw2347. 2019.

https://doi.org/10.1126/sciadv.aaw2347

Open Access American Association for the Advancement of Science (AAAS) (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-07-30 03:00:18 +0900更新時刻: 2024-03-31 10:26:20 +0900

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor(Giant gate-tunable band gap renormalization and excitonic effects in a 2D semiconductor)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
(Giant gate-tunable band gap renormalization and excitonic effects in a 2D semiconductor)