HOME > Article > DetailAcceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealingAshutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, Peter Ramvall. Journal of Applied Physics 134 [3] 035701. 2023.https://doi.org/10.1063/5.0139114 Open Access Materials Data Repository (MDR) NIMS author(s)UZUHASHI, JunOHKUBO, TadakatsuFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing Created at: 2023-07-26 03:26:31 +0900 Updated at: 2025-06-22 07:04:13 +0900
