Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS<sub>2</sub> Transistors via Directionally Angled Etching

Chia-Chun Lin; Naomi Tabudlong Paylaga; Chun-Chieh Yen; Yu-Hsuan Lin; Kuang-Hsu Wang; Kenji Watanabe; Takashi Taniguchi; Chi-Te Liang; Shao-Yu Chen; Wei-Hua Wang; Chia-Chun Lin; Naomi Tabudlong Paylaga; Chun-Chieh Yen; Yu-Hsuan Lin; Kuang-Hsu Wang; Kenji Watanabe; Takashi Taniguchi; Chi-Te Liang; Shao-Yu Chen; Wei-Hua Wang

doi:10.1021/acsnano.4c13581

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Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS₂ Transistors via Directionally Angled Etching

Chia-Chun Lin, Naomi Tabudlong Paylaga, Chun-Chieh Yen, Yu-Hsuan Lin, Kuang-Hsu Wang, Kenji Watanabe, Takashi Taniguchi, Chi-Te Liang, Shao-Yu Chen, Wei-Hua Wang.

ACS Nano 19 [4] 4452-4461. 2025.

https://doi.org/10.1021/acsnano.4c13581

Open Access American Chemical Society (ACS) (Publisher) Materials Data Repository (MDR)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS<sub>2</sub> Transistors via Directionally Angled Etching

作成時刻: 2025-02-23 03:11:00 +0900 更新時刻: 2026-10-13 04:37:17 +0900

Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS2 Transistors via Directionally Angled Etching

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS₂ Transistors via Directionally Angled Etching