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Thermal equilibrium vacancies in Si crystals doped with atoms of Group III, IV, and V: determination of formation energies and entropies by a slow quenching method and their analyses

Masashi Suezawa, Naoki Fukata, Ichiro Yonenaga.

NIMS著者


Materials Data Repository (MDR)上の本文・データセット


    作成時刻: 2025-12-12 03:08:55 +0900 更新時刻: 2026-09-23 04:35:23 +0900

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