HOME > 論文 > 書誌詳細Influence of Silicon Dioxide Doping on Morphology of Silicon Nanowires Grown by Floating Zone MethodGuoqing Li, Quanli Hu, Hiroshi Araki, Hiroshi Suzuki, Wen Yang, Tetsuji Noda. Japanese Journal of Applied Physics 41 [Part 1, No. 12] 7272-7275. 2002.https://doi.org/10.1143/jjap.41.7272 NIMS著者鈴木 裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 11:50:41 +0900更新時刻: 2024-04-01 23:53:08 +0900
