Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe2/h-BN/WSe2 Junctions

Kei Kinoshita; Rai Moriya; Seiya Kawasaki; Shota Okazaki; Momoko Onodera; Yijin Zhang; Kenji Watanabe; Takashi Taniguchi; Takao Sasagawa; Tomoki Machida; Kei Kinoshita; Rai Moriya; Seiya Kawasaki; Shota Okazaki; Momoko Onodera; Yijin Zhang; Kenji Watanabe; Takashi Taniguchi; Takao Sasagawa; Tomoki Machida

doi:10.1021/acsnano.4c09569

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Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe₂/h-BN/WSe₂ Junctions

Kei Kinoshita, Rai Moriya, Seiya Kawasaki, Shota Okazaki, Momoko Onodera, Yijin Zhang, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida.

ACS Nano 18 [42] 28968-28976. 2024.

https://doi.org/10.1021/acsnano.4c09569

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作成時刻: 2025-02-23 03:06:47 +0900 更新時刻: 2026-10-13 04:33:07 +0900