Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

Sayantan Ghosh; Muhammad Bilal Khan; Phanish Chava; Kenji Watanabe; Takashi Taniguchi; Slawomir Prucnal; René Hübner; Thomas Mikolajick; Artur Erbe; Yordan M. Georgiev; Sayantan Ghosh; Muhammad Bilal Khan; Phanish Chava; Kenji Watanabe; Takashi Taniguchi; Slawomir Prucnal; René Hübner; Thomas Mikolajick; Artur Erbe; Yordan M. Georgiev

doi:10.1021/acsami.3c04808

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Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

Sayantan Ghosh, Muhammad Bilal Khan, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Slawomir Prucnal, René Hübner, Thomas Mikolajick, Artur Erbe, Yordan M. Georgiev.

ACS Applied Materials & Interfaces 15 [34] 40709-40718. 2023.

https://doi.org/10.1021/acsami.3c04808

Open Access American Chemical Society (ACS) (Publisher) Materials Data Repository (MDR)

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MDRavailable Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

作成時刻: 2023-09-06 03:56:07 +0900 更新時刻: 2026-09-29 09:39:01 +0900