Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

Keigo Otsuka; Taiki Sugihara; Taiki Inoue; Weijie Jia; Satoru Matsushita; Takanobu Saito; Minhyeok Lee; Takashi Taniguchi; Kenji Watanabe; Gregory Pitner; Ming-Yang Li; Tzu-Ang Chao; Rong Xiang; Shohei Chiashi; Shigeo Maruyama; Keigo Otsuka; Taiki Sugihara; Taiki Inoue; Weijie Jia; Satoru Matsushita; Takanobu Saito; Minhyeok Lee; Takashi Taniguchi; Kenji Watanabe; Gregory Pitner; Ming-Yang Li; Tzu-Ang Chao; Rong Xiang; Shohei Chiashi; Shigeo Maruyama

doi:10.1007/s12274-023-6241-6

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Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

Keigo Otsuka, Taiki Sugihara, Taiki Inoue, Weijie Jia, Satoru Matsushita, Takanobu Saito, Minhyeok Lee, Takashi Taniguchi, Kenji Watanabe, Gregory Pitner, Ming-Yang Li, Tzu-Ang Chao, Rong Xiang, Shohei Chiashi, Shigeo Maruyama.

Nano Research 16 [11] 12840-12848. 2023.

https://doi.org/10.1007/s12274-023-6241-6

Open Access Springer Science and Business Media LLC (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2023-12-21 10:19:37 +0900 更新時刻: 2026-09-29 09:45:49 +0900