Interlayer Exciton Diode and Transistor

Daniel N. Shanks; Fateme Mahdikhanysarvejahany; Trevor G. Stanfill; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Brian J. LeRoy; John R. Schaibley; Daniel N. Shanks; Fateme Mahdikhanysarvejahany; Trevor G. Stanfill; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Brian J. LeRoy; John R. Schaibley

doi:10.1021/acs.nanolett.2c01905

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Interlayer Exciton Diode and Transistor

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Trevor G. Stanfill, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, John R. Schaibley.

Nano Letters 22 [16] 6599-6605. 2022.

https://doi.org/10.1021/acs.nanolett.2c01905

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作成時刻: 2022-08-30 03:27:45 +0900 更新時刻: 2026-10-30 08:24:49 +0900