HOME > 論文 > 書誌詳細Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopyT. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, H. Osawa, M. Kitabatake. Journal of Crystal Growth 416 142-147. 2015.https://doi.org/10.1016/j.jcrysgro.2015.01.034 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-07-04 22:30:03 +0900 更新時刻: 2025-05-17 04:29:45 +0900
